PART |
Description |
Maker |
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
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SOLITRON DEVICES INC
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CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
|
2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|43 3 A, 60 V, NPN, Si, POWER TRANSISTOR
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NEC[NEC] NEC, Corp. NEC Corp.
|
BC550C BC549B BC549B-D BC549C BC550B |
TRANSISTOR|BJT|NPN|45VV(BR)CEO|100MAI(C)|TO-92
Low Noise Transistors NPN Silicon(硅NPN低噪声晶体管) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Low Noise Transistor NPN Silicon(30V硅NPN低噪声晶体管) 低噪声晶体管NPN硅(30V的硅npn型低噪声晶体管)
|
ON Semiconductor http://
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TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS High power NPN silicon transistor Silicon NPN switching transistor Silicon NPN transistor PNP power transistor Small signal NPN transistor Medium power NPN silicon transistor Dual npn-pnp complementary bipolar transistor Complementary power transistors NPN power transistors 模拟IC Analog IC 模拟IC
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RECOM Electronic GmbH Vishay Intertechnology, Inc.
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CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat) NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters NPN/PNP Transistor Arrays 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC 50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
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164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 160V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 120伏特五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五(巴西)总裁|甲一(c)| STR-5/16
|
Ecliptek, Corp.
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
KSC1623LMTF KSC1623GMTFNL KSC1623O |
NPN Epitaxial Silicon Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN Epitaxial Silicon Transistor 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR Low Frequency Amplifier & High Frequency OSC. 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
FJPF13007H2TTU FJPF13007TU |
NPN Silicon Transistor 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB NPN Silicon Transistor; Package: TO-220F; No of Pins: 3; Container: Rail 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
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NXP Semiconductors N.V.
|
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